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TSC4505
High Voltage NPN Transistor
SOT-23
Pin Definition: 1. Base 2. Emitter 3. Collector
TO-92
Pin Definition: 1. Emitter 2. Base 3. Collector
PRODUCT SUMMARY
BVCEO BVCBO IC VCE(SAT) 400V 400V 300mA 0.1V @ IC / IB = 10mA / 1mA
Features
Low VCE(SAT) 0.15V @ IC / IB = 10mA / 10mA (Typ.) Complementary part with TSA1759
Ordering Information
Part No.
TSC4505CX RF TSC4505CT B0 TSC4505CT A3
Package
SOT-23 TO-92 TO-92
Packing
3Kpcs / 7" Reel 1Kpcs / Bulk 2Kpcs / Ammo
Structure
Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms, Duty50% SOT-23 TO-92
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
400 400 6 300 0.225 0.6 +150 - 55 to +150
Unit
V V V mA W
o o
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Reverse Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance
Conditions
IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 400V, IE = 0 VCE = 300V, REB = 4k VEB = 6V, IC = 0 IC / IB = 10mA / 1mA IC / IB = 10mA / 1mA VCE = 10V, IC = 10mA VCE =10V, IC=-10mA, f=10MHz VCB = 10V, IE = 0, f=1MHz
Symbol
BVCBO BVCEO BVEBO ICBO ICER IEBO VCE(SAT) VBE(SAT) hFE fT Cob
Min
400 400 6 -----100 ---
Typ
------0.1 --20 7
Max
---10 20 10 0.5 1.5 270 ---
Unit
V V V uA nA uA V V
MHz pF
1/5
Version: A07
TSC4505
High Voltage NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
2/5
Version: A07
TSC4505
High Voltage NPN Transistor
SOT-23 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5 10 5 10
3/5
Version: A07
TSC4505
High Voltage NPN Transistor
TO-92 Mechanical Drawing
DIM A B C D E F G H
TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017
4/5
Version: A07
TSC4505
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A07

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